Module catalogue 2023/2024
| 588-3 | Technology in clean room | Materials and Chemistry | S8 | ||||||
|---|---|---|---|---|---|---|---|---|---|
| Lessons : 12 h | TD : 24 h | TP : 0 h | Project : 0 h | Total : 36 h | |||||
| Co-ordinator : Jean-Michel Rueff | |||||||||
| Prerequisite | |
|---|---|
| 2M2AD1 | |
| Course Objectives | |
| This internship, realized in clean room in Rennes during 3 days, allows the students to carry out the complete fabrication of PMOS type transistors as well as their characterization. | |
| Syllabus | |
| Use of a process for manufacturing a PMOS transistor by photolithography according to the following technological steps: 1) Opening source and drain windows through masking oxide and diffusion doping 2) Etching of the masking oxide at the gate 3) Dry oxidation at the grid and opening of source and drain contact windows 4) Depot of aluminum and etching of metal contacts 5) Electrical characterizations. |
|
| Practical work (TD or TP) | |
| Non renseigné | |
| Acquired skills | |
| At the end of this internship students will have practical experience in the realization and characterization of PMOS structures. They will also have learned to evolve and work in a clean room. | |
| Bibliography | |
| Non renseigné |
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